Group-III nitrides are material compounds of nitrogen (N) and the elements in the first column of the p-element block of the periodic table (technically, group IIIB): boron (B), aluminium (Al), gallium (Ga), indium (In) and thallium (Tl). The compounds AlN, GaN, InN and their alloys are technologically important semiconductors with multiple applications in optoelectronics, in particular incorporated in LEDs for light production. Much of my work during my PhD at the Tyndall National Institute focused on the study of some of the properties of these materials.
Our two papers on understanding experimental X-ray spectra of materials utilizing simulated references just got accepted (and appeared as “just accepted” manuscripts) in Chemistry of Materials as Part I (more qualitative) & Part II (more quantitative). These papers are a collaboration of our group (Anja Aarva, who did most of the work, Tomi Laurila and …